the Creative Commons Attribution 4.0 License.
the Creative Commons Attribution 4.0 License.
Response relationship between atmospheric O3 and its precursors in Beijing based on smog chamber simulation and a revised MCM model
Abstract. Ozone (O3) pollution has been receiving increasing attention, but its simulation performance in models remains unsatisfactory. This study characterized the response relationship between O3 and its precursors in the atmospheric relavant condition through a combination of smog chamber experiments and Master Chemical Mechanism (MCM) box model. By adding chamber wall related reaction mechanisms, the model achieved significant improvement in simulating O3 with an Normalized Mean Bias (NMB) value changing from -76.1 % to -12.7 %. The enhanced model was subsequently extended to the ambient atmospheric conditions in the Daxing District of Beijing, incorporating the parameterization of ground related reactions, heterogeneous reactions of Nitrogen Dioxide (NO2), and unidentified NO2 sinks. Compared to basic model, the resulting revised model demonstrated substantially enhanced accuracy in simulating ambient O3 concentrations with an Normalized Mean Bias (NMB) value changing from 113.8 % to -5.2 % and enhanced O3 formation sensitivity to Volatile Organic Compounds (VOCs) in Daxing District. These findings underscore that incorporating interface mediated chemical processes and accounting for unidentified NO2 sinks into model is critical for determining the sensitivity of O3 formation and optimizing regional O3 pollution control strategies.
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Status: final response (author comments only)
- RC1: 'Comment on egusphere-2025-3956', Anonymous Referee #1, 02 Oct 2025
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RC2: 'Comment on egusphere-2025-3956', Anonymous Referee #2, 26 Nov 2025
This manuscript outlines attempts to improve the modelling of O3 concentrations, and the production of NOx-VOC isopleths, by box modelling simulations. The paper has two halves. The first half describes a series of chamber experiments in which a chamber-specific mechanism is produced to improve O3 concentration predictions. The second half attempts to use the developed chamber-specific mechanism to account for model biases in a box model of the ambient environment, suggesting that heterogeneous reactions could account for over-predictions in ozone concentrations from the base simulation.
The experimental procedures for the chamber experiments seem sound, and while there is some room for improvement in the explanation of the method by which the chamber-specific mechanism rates are selected (as explained later), the produced mechanism appears to be in line with existing literature and reproduces the observations well.
However, I believe that there are numerous issues with the implementation of the ambient box models, including the author’s focus on NO2 uptake as the sole explanation for model discrepancies. Some of these issues may be clarified with additional context in the explanation, but others may require deeper consideration. I have organised my comments in the attached document into 4 sections: NO2 Sink, General Comments, Specific Comments, and Minor Comments. I do believe there is value in efforts to improve O3 predictions and that the potential role of NO2 uptake is an important consideration, and I hope that addressing these comments can provide the improvements in the manuscript that I believe are necessary for publication.
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This manuscript presents a well-structured and scientifically rigorous study that combines smog chamber experiments with a revised MCM box model to improve the simulation of O3 formation and its sensitivity to precursors. The work is highly relevant to current air quality challenges, particularly in regions like Beijing suffering from severe O3 pollution. The methodological approach is sound, the results are clearly presented, and the conclusions are well-supported by the data. The inclusion of chamber wall effects and unidentified NO2 sinks represents a valuable contribution to the field. I recommend acceptance after minor revisions.
General comments
Technical comments